High-resolution study of x-ray resonant Raman scattering at the K edge of silicon.

تحلیل پراکندگی پرتوهای X تشدید یافته در لبه K ی Mn در Nd./5Sr./5MnO3

 Studies of phenomena such as charge, orbital and spin ordering in manganite has attracted much interest in recent years. These studies have been possible from an experimental point of view by the third generation synchrotron sources. X-ray with high flux density, tunable energy and polarization can be produced in synchrotron sources. Experiments have shown a resonant in peak intensity originat...

Aluminum Impurities in Silicon: Investigation of X-ray Raman Scattering in Total Reflection X-ray Fluorescence Spectroscopy

Total Reflection X-ray Fluorescence (TXRF) using Synchrotron Radiation from the Stanford Synchrotron Radiation Laboratory (SSRL) has been used to study Al impurities on Si wafer surfaces. For primary excitation energies below the Si K absorption edge an inelastic resonance scattering due to resonant xray Raman scattering is observed. This scattering dominates the background behavior of the Al K...

Thomson-resonant interference effects in elastic x-ray scattering near the Cl K edge of HCl.

We experimentally observed interference effects in elastic x-ray scattering from gas-phase HCl in the vicinity of the Cl K edge. Comparison to theory identifies these effects as interference effects between non-resonant elastic Thomson scattering and resonant Raman scattering. The results indicate the non-resonant Thomson and resonant Raman contributions are of comparable strength. The measurem...

Nondipole Resonant X-ray-Raman Spectroscopy: Polarized Inelastic Scattering at the K Edge of Cl2

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